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Pressure‐induced metallization and structural evolution of Cu 3 N
Author(s) -
Zhao J. G.,
Yang L. X.,
Yu Y.,
You S. J.,
Liu J.,
Jin C. Q.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200541280
Subject(s) - diffraction , materials science , diamond anvil cell , diamond , semiconductor , nitride , phase transition , phase (matter) , ambient pressure , crystal structure , analytical chemistry (journal) , conductance , crystallography , chemistry , condensed matter physics , metallurgy , nanotechnology , thermodynamics , optoelectronics , optics , layer (electronics) , physics , organic chemistry , chromatography
In situ resistance evolution with pressure of anti‐perovskite nitride Cu 3 N was measured using the diamond anvil cell (DAC) technique up to 20.0 GPa at room temperature. A sharp drop of resistance from 10 5 Ω at ambient pressure to several Ω was observed in the range 3.0–10.0 GPa. This is an indication of the pressure‐induced metallization in the Cu 3 N semiconductor. Meanwhile we also performed the high‐pressure energy dispersive X‐ray diffraction experiments on Cu 3 N at the pressures up to 39.2 GPa. It was found that a crystal structure phase transition begins to take place at ∼5.0 GPa on Cu 3 N, which is generally consistent with the electronic conductance results. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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