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Correlation effects in the valence bands of ferromagnetic semiconductor EuS
Author(s) -
Sharma A.,
Nolting W.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200541260
Subject(s) - condensed matter physics , valence (chemistry) , semiconductor , ferromagnetism , density of states , materials science , valence band , angle resolved photoemission spectroscopy , lattice (music) , electronic band structure , magnetic semiconductor , physics , electronic structure , band gap , quantum mechanics , optoelectronics , acoustics
We present a many body analysis of the multi‐band Kondo lattice model. The study is then combined with the first principles TB‐LMTO band structure calculations, in order to investigate the temperature dependent correlation effects in the 3p valence bands of the ferromagnetic semiconductor EuS. Some of the physical properties of interest like the quasi‐particle density of states (Q‐DOS), spectral density (SD) and quasi‐particle band structure (Q‐BS) are calculated and discussed. Therewith, we propose a spin resolved ARPES of the valence bands of EuS to be performed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)