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Photoluminescence in implanted and doped silicon near room temperature
Author(s) -
Matsubara Ichiro,
Sasahara Shingo,
Mishina Tomobumi,
Ishibashi Yasuhiko,
Kobayashi Toshihiko,
Nakahara Jun'ichiro
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200541220
Subject(s) - photoluminescence , doping , silicon , materials science , boron , excited state , optoelectronics , phonon , analytical chemistry (journal) , condensed matter physics , chemistry , atomic physics , physics , organic chemistry , chromatography
Photoluminescence in implanted and doped silicon at room temperature is measured, and the observed structures are assigned as intrinsic phonon‐assisted indirect allowed transitions. The temperature of photoexcited carriers, which is higher than the bath temperature, is estimated. For confined carriers produced by boron implantation the temperature dependence of the effective temperature of the excited carriers is the same for the different samples, but an enhancement of the photoluminescence is observed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)