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Rashba spin–orbit effect on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions
Author(s) -
Zhang YingTao,
Guo Yong,
Li YouCheng
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200541216
Subject(s) - condensed matter physics , spin–orbit interaction , ferromagnetism , heterojunction , physics , semiconductor , fano factor , spin polarization , shot noise , scattering , spin (aerodynamics) , electron , fano plane , rashba effect , coupling (piping) , polarization (electrochemistry) , magnetic semiconductor , spintronics , materials science , quantum mechanics , optics , chemistry , mathematics , detector , pure mathematics , metallurgy , thermodynamics
Using the scattering approach, shot noise in ferromagnetic/semiconductor/ferromagnetic heterjunctions in the presence of Rashba spin–orbit interaction has been studied theoretically. The quantum size effect, degree of spin‐polarization, and Rashba spin–orbit interaction are considered simultaneously. The results indicate that the Fano factors for spin‐polarized electrons oscillate strongly due to the influence not only of the Rashba spin–orbit coupling but also of the length of the semiconductor layer. For a certain length of semiconductor, the Fano factors can be determined by the strength of the Rashba spin–orbit coupling. Further, it is found that the higher the degree of spin‐polarization, the larger the Fano factors. These results may be useful in the measurement of Rashba spin–orbit coupling via shot noise. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)