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The study of screening phenomena under the nano‐domain formation in ferroelectric semiconductors
Author(s) -
Morozovska An.,
Eliseev Eugene A.
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200541208
Subject(s) - condensed matter physics , ferroelectricity , radius , electric field , screening effect , semiconductor , domain wall (magnetism) , materials science , debye length , nano , chemistry , physics , optoelectronics , ion , magnetic field , dielectric , magnetization , computer security , organic chemistry , quantum mechanics , computer science , composite material
We calculate the realistic sizes of nano‐domains recorded by the electric field of atomic force microscope tip in ferroelectric semiconductors. We modified the existing models of domain formation allowing for the Debye screening, recharging of sluggish surface screening layers caused by emission current between the tip apex and the domain face and the redistribution of domain depolarization field induced by the charged tip apex. We have shown that the depolarization field energy of the domain butt, Debye screening effects and field emission at high voltages lead to the essential decrease of the equilibrium domain sizes. We obtained, that the domain length and radius do not decrease continuously with voltage decrease: the domain appears with non‐zero length and radius at definite critical voltage. Such “threshold” domain formation is similar to the first order phase transition and correlates with recent theoretical and experimental investigations. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)