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Evidence of different confinement regimes in site‐controlled pyramidal InGaN structures
Author(s) -
PérezSolórzano V.,
Gröning A.,
Schweizer H.,
Jetter M.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200541207
Subject(s) - photoluminescence , epitaxy , quantum dot , sapphire , luminescence , materials science , wavelength , optoelectronics , condensed matter physics , apex (geometry) , range (aeronautics) , phase (matter) , molecular physics , nanotechnology , chemistry , optics , physics , laser , geometry , mathematics , organic chemistry , layer (electronics) , composite material
We deposited InGaN on GaN micropyramids, which were grown by selective metal‐organic vapor phase epitaxy on sapphire. We expected the formation of a quantum well on the side‐walls of the pyramids, a quantum wire on the edges, and a quantum dot on its apex. We studied the emission properties of these structures using low‐temperature time‐resolved photoluminescence. Our measurements showed three regions of different confinement within the emission in the wavelength range between 2.12 eV and 2.40 eV. By analyzing the decay behavior, the characteristics of the luminescence was determined to originate from localized states. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)