MOVPE growth and surface reconstructions of GaAsN(001) surfaces | Zendy

Ehlert R. | Zendy; Poser F. | Zendy; Esser N. | Zendy; Vogt P. | Zendy; Richter W. | Zendy

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MOVPE growth and surface reconstructions of GaAsN(001) surfaces

Author(s) -

Ehlert R.,

Poser F.,

Esser N.,

Vogt P.,

Richter W.

Publication year - 2005

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200541174

Subject(s) - metalorganic vapour phase epitaxy , annealing (glass) , nitrogen , amorphous solid , anisotropy , in situ , materials science , analytical chemistry (journal) , spectroscopy , chemistry , crystallography , layer (electronics) , optics , nanotechnology , epitaxy , physics , chromatography , metallurgy , organic chemistry , quantum mechanics

In this study we present comparative in‐situ Reflectance Anisotropy Spectroscopy (RAS) studies of GaAs 1– x N x under MOVPE conditions and in UHV for samples with a nitrogen content of up to 5%. The samples were grown by MOVPE and after growth capped with an amorphous As‐layer, transferred to UHV and decapped by annealing. Three different surface reconstructions ( c (4 × 4), (2 × 4), (4 × 2)) were obtained after decapping and prolonged annealing at different temperatures. These reconstructions, though similar to those found on the GaAs(001) surface show clear nitrogen‐related features in the RAS line shape. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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