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A fast reflectance anisotropy spectrometer for in situ growth monitoring
Author(s) -
Kaspari Christian,
Pristovsek Markus,
Richter Wolfgang
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200541143
Subject(s) - metalorganic vapour phase epitaxy , epitaxy , anisotropy , spectrometer , materials science , reflectivity , in situ , optics , spectroscopy , analytical chemistry (journal) , range (aeronautics) , resolution (logic) , optoelectronics , chemistry , nanotechnology , physics , organic chemistry , layer (electronics) , quantum mechanics , chromatography , artificial intelligence , computer science , composite material
We report on an optical multichannel RAS (Reflectance Anisotropy Spectroscopy) setup capable of measuring at multiple photon energies simultaneously in the spectral range between 1.4 and 5.0 eV at a temporal resolution of up to 30 ms. The setup is specifically designed for time‐resolved studies of surface processes (e.g. epitaxial growth). Its accuracy was evaluated on static surfaces by comparison with RAS spectra acquired using a conventional scanning RAS setup. The performance was demonstrated by studying 2D island growth oscillations during GaAs epitaxy with TMGa and AsH 3 or tBAs in metal‐organic vapour phase epitaxy (MOVPE). (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)