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Calculation of reflectance anisotropy for semiconductor surface exploration
Author(s) -
Schmidt W. G.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200541112
Subject(s) - anisotropy , semiconductor , reflectivity , surface (topology) , field (mathematics) , semiconductor materials , spectral line , computational physics , spectroscopy , materials science , optics , power (physics) , condensed matter physics , statistical physics , physics , engineering physics , optoelectronics , mathematics , quantum mechanics , geometry , pure mathematics
Abstract Reflectance anisotropy spectroscopy (RAS) is exquisitely sensitive to probe surfaces, with many potential applications in determining surface geometries or monitoring material growth. Thanks to recent computational and methodological progress it has now become possible to calculate surface optical spectra accurately and with true predictive power. Here I review briefly the simulation of RAS spectra and discuss recent methodological advances, which allow for the modelling of self‐energy, excitonic and local‐field effects in large and complex systems. Numerical results for semiconductor surfaces in comparison to measured data are used to illustrate the potential and limits of the different levels of theory. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)