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Temperature dependence of the energy gap of In x Se 1– x compounds
Author(s) -
Michalewicz Anna,
Nowak Marian,
Kępińska Mirosława
Publication year - 2006
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200541055
Subject(s) - band gap , absorption edge , photon energy , semiconductor , absorption (acoustics) , range (aeronautics) , photon , chemistry , atmospheric temperature range , atomic physics , condensed matter physics , energy (signal processing) , analytical chemistry (journal) , physics , materials science , optics , thermodynamics , optoelectronics , quantum mechanics , composite material , chromatography
The optical absorption for photon energies of In x Se 1– x thin films was used to determine the variation of the energy gap and the Urbach energy as a function of temperature in the range from 80 to 340 K at photon energies hν = 1.24 to 2.6 eV. The data were analyzed using the Varshni relation [Physica 34 , 149 (1967)] for the temperature dependence of semiconductor band gaps. The formula by Yang et al. [cf., e.g., J. Phys. Chem. Solids 65 , 1015 (2004)] for the temperature dependence of the energy width of the Urbach absorption edge was also used. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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