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Self‐consistent calculations of phonon scattering rates in the GaAs transistor structure with one‐dimensional electron gas
Author(s) -
Borzdov A. V.,
Pozdnyakov D. V.,
Galenchik V. O.,
Borzdov V. M.,
Komarov F. F.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200541036
Subject(s) - scattering , transistor , phonon , phonon scattering , scattering rate , polar , fermi gas , rate equation , poisson's equation , condensed matter physics , chemistry , electron , physics , atomic physics , quantum mechanics , kinetics , voltage
Self‐consistent calculations of acoustic and polar optical phonon scattering rates in GaAs quantum wire transistor structures were carried out with account of collisional broadening. The influence of the gate bias on the scattering rates was examined, too. It was shown that in order to treat the scattering rates rigorously it is important to search for electron energy levels by means of the self‐consistent solution of Schrödinger and Poisson equations and to take into account the collisional broadening. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)