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Phenomenological description of domain recording in ferroelectric semiconductors by using atomic force microscopy
Author(s) -
Morozovska An.,
Eliseev Eugene A.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200541008
Subject(s) - ferroelectricity , condensed matter physics , radius , domain wall (magnetism) , domain (mathematical analysis) , materials science , semiconductor , electric field , crystal (programming language) , microscopy , optics , optoelectronics , physics , dielectric , magnetic field , magnetization , mathematical analysis , computer security , mathematics , quantum mechanics , computer science , programming language
The equilibrium sizes of domains caused by the electric field of the atomic force microscope tip in ferroelectric semicon‐ductor crystals have been calculated. The domain was consi‐dered as a prolate semi‐ellipsoid with rather thin domain walls. For the first time we modified the Landauer model al‐lowing for semiconductor properties of the sample and the surface energy of the domain butt. The free carriers inside the crystal lead to the formation of a screening layer around the domain, which partially shields its interior from the depolari‐zation field. The obtained dependence of domain radius on applied voltage is in a good quantitative agreement with the ones of submicron ferroelectric domains recorded by high‐voltage atomic force and scanning probe microscopy in LiNbO 3 , BaTiO 3 and RbTiOPO 4 crystals. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)