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Influence of imperfect surface on dielectric susceptibility in the ferroelectric thin film with second‐order phase transition
Author(s) -
Lin Shan,
Lü TianQuan
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200540103
Subject(s) - ferroelectricity , dielectric , materials science , condensed matter physics , phase transition , polarization (electrochemistry) , thin film , transition temperature , phase (matter) , surface energy , imperfect , composite material , nanotechnology , chemistry , optoelectronics , physics , superconductivity , organic chemistry , linguistics , philosophy
A generalized Ginzburg–Landau–Devonshire free energy has been used to investigate the temperature and the thickness dependence of the dielectric susceptibility of ferroelectric (FE) thin films with imperfect surface layers and the second‐order phase transition. When the spontaneous polarization is depressed in the surface layer, the transition temperature of the film is lower than that of the bulk; the mean susceptibility of the film increases with the decrease of the film thickness and goes up rapidly near the critical thickness, and a size‐driven phase transition will take place in this case. When the spontaneous polarization is enhanced in the surface layer, the critical temperature of the film is higher than that of the bulk, the mean susceptibility decreases with decreasing the film thickness, and there is no size‐driven phase transition in this case. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)