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Phonon polariton modes in porous III–V semiconductors
Author(s) -
Wilson K. S. Joseph,
Navaneethakrishnan K.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200540098
Subject(s) - polariton , semiconductor , condensed matter physics , phonon , hydrostatic pressure , porosity , materials science , quantum dot , matrix (chemical analysis) , hydrostatic equilibrium , physics , optoelectronics , quantum mechanics , composite material , thermodynamics
The phonon polariton modes in the bulk porous III–V semiconductor materials like GaP and GaAs are investigated for different porosity values. Their behavior under an external hydrostatic pressure is also studied. The frequencies of the various modes shift to higher values. The model has been extended to the case of self assembled GaP quantum dots (QDOTs) in GaAs matrix. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)