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Spin polarization and electronic structure of ferromagnetic Mn 5 Ge 3 epilayers
Author(s) -
Panguluri R. P.,
Zeng Changgan,
Weitering H. H.,
Sullivan J. M.,
Erwin S. C.,
Nadgorny B.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200510030
Subject(s) - spintronics , condensed matter physics , ferromagnetism , curie temperature , spin polarization , andreev reflection , materials science , germanium , polarization (electrochemistry) , epitaxy , physics , optoelectronics , nanotechnology , chemistry , silicon , quantum mechanics , superconductivity , electron , layer (electronics)
Abstract Germanium‐based alloys hold great promise for future spintronics applications, due to their potential for integration with conventional Si‐based electronics. High‐quality single phase Mn 5 Ge 3 (0001) films, grown by solid‐phase epitaxy on Ge(111) and GaAs(111), exhibit strong ferromagnetism up to the Curie temperature T C ∼ 296 K. Point Contact Andreev Reflection (PCAR) measurements on Mn 5 Ge 3 epilayers reveal a spin‐polarization P = 42 ± 5% for both substrates. We also calculate the spin polarization of bulk Mn 5 Ge 3 in the diffusive and ballistic regimes using density‐functional theory (DFT). The measured spin polarization exceeds the theoretical estimates of PDFT = 35 ± 5% and 10 ± 5% for the diffusive and ballistic limits, respectively. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)