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Manifestation of the equilibrium hole distribution in photoluminescence of n‐InN
Author(s) -
Klochikhin A. A.,
Davydov V. Yu.,
Emtsev V. V.,
Sakharov A. V.,
Kapitonov V. A.,
Andreev B. A.,
Lu Hai,
Schaff William J.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200510007
Subject(s) - photoluminescence , molecular beam epitaxy , electron , band gap , degenerate energy levels , relaxation (psychology) , condensed matter physics , effective mass (spring–mass system) , chemistry , recombination , spectral line , atomic physics , molecular physics , materials science , physics , epitaxy , optoelectronics , quantum mechanics , psychology , social psychology , organic chemistry , layer (electronics) , biochemistry , gene
Photoluminescence (PL) of n‐InN grown by molecular beam epitaxy with Hall concentrations from 3.6 to 7.3 × 10 17 cm –3 demonstrates dependences on carrier concentration, temperature, and excitation density which give evidences of a fast energy relaxation rate of photoholes and their equilibrium distribution over localized states. The structure of the PL spectra observed at 4.2 and 77 K in the energy interval from 0.50 to 0.67 eV indicates that a considerable part of holes is trapped by deep and shallow acceptors before the interband recombi‐ nation with degenerate electrons occurs. At room temperature, the band‐to‐band recombination of free holes and electrons dominates in PL. Experimental results on PL and absorption are described by model calculations under the assumptions of a band gap equal to 0.665–0.670 eV at zero temperature and zero carrier concentration and a non‐parabolic conduction band with the effective mass at the G ‐point equal to 0.07 of the free electron mass. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)