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Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures
Author(s) -
Ruterana P.,
Singh P.,
Kret S.,
Jurczak G.,
Maciejewski G.,
Dluzewski P.,
Cho H. K.,
Choi R. J.,
Lee H. J.,
Suh E. K.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200490017
Subject(s) - high resolution transmission electron microscopy , indium , heterojunction , quantum well , materials science , transmission electron microscopy , optoelectronics , nanometre , condensed matter physics , relaxation (psychology) , optics , physics , nanotechnology , laser , psychology , social psychology
The cover picture of this issue depicts indium composition fluctuations in InGaN/GaN multi quantum wells. The coded color strain distribution (left) was derived from finite element method calculations of the strain relaxation process and high‐resolution transmission electron microscopy (HRTEM) image simulations, superimposed on the HRTEM image of the quantum wells. The possible corresponding shape and ε xx strain profiles in the indium rich clusters (right) hint at a concentration close to pure InN in their core. The paper by Pierre Ruterana et al. [1] was presented at the 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED‐2004), held in Gyeongju, Korea, 15–19 March 2004. Further papers from ISBLLED‐2004 are published in phys. stat. sol. (a) 201 , No. 12 (2004) and phys. stat. sol. (c) 1 , No. 10 (2004).