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Slow mode degradation mechanism of ZnSe based white LEDs
Author(s) -
Adachi Masahiro,
Ando Koshi,
Abe Tomoki,
Tsutsumi Shigeyuki,
Inoue Noboru,
Kasada Hirofumi,
Katayama Koji,
Nakamura Takao
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200490003
Subject(s) - light emitting diode , electroluminescence , optoelectronics , diode , spectroscopy , engineering physics , materials science , degradation (telecommunications) , white light , physics , engineering , telecommunications , nanotechnology , layer (electronics) , quantum mechanics
The cover picture is a photograph showing a row of ZnSe based white LEDs. In this issue's ‘Editor's Choice’ [1], the point defect induced degradation in these high quality diodes is investigated by electroluminescence, deep level transient spectroscopy, and isothermal capacitance transient spectroscopy investigations. The first author, Masahiro Adachi, is member of the Optoelectronics Laboratory at Tattori University, where he is working on microscopic defects in ZnSe based devices, defect induced degradation, and defect behaviour. The paper is an invited presentation from the II–VI '03 Conference held in Niagara Falls, New York, USA, 22–26 September 2003. The full Proceedings of the Eleventh International Conference on II–VI Compounds are published in physica status solidi (c) – conferences and critical reviews 1 , No. 4 (March 2004) (ISBN 3‐527‐40510‐0).