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On the detailed mechanism of the burn‐in in GaInP/GaAs HBTs
Author(s) -
CabreraArenas V.,
MimilaArroyo J.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200461829
Subject(s) - bipolar junction transistor , burn in , heterojunction , electron , recombination , optoelectronics , current (fluid) , materials science , exponential function , heterojunction bipolar transistor , transistor , base (topology) , time constant , condensed matter physics , chemistry , physics , electrical engineering , engineering , voltage , thermodynamics , mathematics , nuclear physics , mathematical analysis , biochemistry , gene
The evolution of the base current of GaInP/GaAs Heterojunction Bipolar Transistors (HBTs) is studied as a function of the stressing current during the burn‐in. It is found that the base current decreases in an exponential way with the involved time constants depending themselves on the stressing current in a way proportional to I –2 . Such behaviour is explained considering two independent recombination centres that are deactivated during the stressing by the capture of two electrons. These two recombination centres might be H + and the quasi complex Si + –H + which capture two electrons each becoming H − and SiH. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)