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Effects of applied magnetic fields on direct and indirect excitons in coupled semiconductor quantum wells
Author(s) -
ReyesGómez E.,
Oliveira L. E.,
de DiosLeyva M.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200461733
Subject(s) - exciton , quantum well , effective mass (spring–mass system) , reduced mass , magnetic field , envelope (radar) , condensed matter physics , biexciton , physics , dispersion (optics) , wave function , field (mathematics) , quantum mechanics , telecommunications , laser , radar , mathematics , computer science , pure mathematics
We have investigated magnetic‐field effects on the direct‐ and indirect‐exciton dispersions and on the exciton effective mass in the plane perpendicular to the applied field, within the variational framework and effective‐mass approximation, for coupled GaAs–(Ga,Al)As quantum wells. The simple hydrogen‐like envelope wave function we have used provides the expected behavior for the exciton dispersion law in a wide range of the center‐of‐mass momenta, and leads to an analytical expression for the exciton effective mass. Theoretical results for the magnetic‐field dependent exciton dispersion and effective mass are in quite good agreement with available experimental measurements. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)