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Cd desorption induced by Zn exposure during atomic layer epitaxy of Cd x Zn 1– x Te
Author(s) -
Larramendi E. M.,
de Melo O.,
HernándezCalderón I.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200461730
Subject(s) - atomic layer epitaxy , desorption , photoluminescence , substrate (aquarium) , chemistry , analytical chemistry (journal) , epitaxy , activation energy , zinc , kinetic energy , atmospheric temperature range , layer (electronics) , crystallography , materials science , adsorption , physics , optoelectronics , oceanography , organic chemistry , chromatography , quantum mechanics , geology , meteorology
The substitution of surface Cd atoms by Zn atoms during the growth of Cd x Zn 1– x Te by atomic layer epitaxy has been studied as a function of substrate temperature and Zn exposure time by means of the analysis of the photoluminescence spectra of Cd x Zn 1– x Te/ZnTe quantum wells. For substitution and desorption of Cd induced by Zn exposure an activation energy of 1.5 eV was found. The complexity of this desorption process was denoted by the fourth order of the kinetic reaction in the 250–280 °C temperature range. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)