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Dephasing by electron–phonon interaction in an AB ring with an embedded quantum dot
Author(s) -
Ueda Akiko,
Eto Mikio
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200460768
Subject(s) - dephasing , condensed matter physics , quantum dot , biasing , phonon , physics , electron , degenerate energy levels , perturbation theory (quantum mechanics) , conductance quantum , conductance , fano plane , fano resonance , chemistry , quantum mechanics , voltage , quantum well , quantum point contact , plasmon , laser , mathematics , pure mathematics
We study the dephasing effect on the transport properties in an Aharonov–Bohm ring with an embedded quantum dot, due to the electron–phonon interaction. The differential conductance is calculated under finite bias using Keldysh Green function. The electron–phonon interaction is treated (i) by the canonical transformation, or (ii) by the second‐order perturbation. By the latter method, we find that the Fano resonance is suppressed by the electron–phonon interaction and that the suppression increases with increasing bias voltage. The calculations by the former method do not yield the bias‐voltage dependence of the dephasing effect. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)