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Ultrathin metal layers to convert surface polarity of nitride semiconductors
Author(s) -
Nakayama T.,
Mikami J.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200460766
Subject(s) - polarity (international relations) , wurtzite crystal structure , monolayer , metal , materials science , nitride , semiconductor , crystal (programming language) , deposition (geology) , crystallography , layer (electronics) , chemistry , nanotechnology , optoelectronics , hexagonal crystal system , metallurgy , paleontology , biochemistry , sediment , biology , computer science , programming language , cell
The possibility of the surface‐polarity conversion of AlN upon the deposition of ultrathin Al metal layers is investigated by the first‐principles theoretical calculations. It is shown that, reflecting the crystal structures of underlying layers and the binding‐energy difference between Al–N and Al–Al bonds, the surface‐polarity conversion from N‐face to Al‐face polarity becomes possible only when the deposited Al metal layers have wurtzite structure and two‐monolayer thickness. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)