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Strongly correlated multilayered nanostructures near the Mott transition
Author(s) -
Freericks J. K.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200460021
Subject(s) - quantum tunnelling , condensed matter physics , nanostructure , mott transition , crossover , metal–insulator transition , quantum , quantum critical point , physics , mott insulator , perpendicular , electron , hubbard model , materials science , quantum mechanics , mathematics , electrical resistivity and conductivity , quantum phase transition , phase transition , geometry , superconductivity , artificial intelligence , computer science
We examine devices constructed out of multilayered sandwiches of semi‐infinite metal–barrier–semi‐infinite metal, with the barrier tuned to lie near the quantum critical point of the Mott metal–insulator transition. By employing dynamical mean field theory, we are able to solve the many‐body problem exactly (within the local approximation) and determine the density of states through the nanostructure and the charge transport perpendicular to the planes. We introduce a generalization of the Thouless energy that describes the crossover from tunneling to incoherent thermally activated transport. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)