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Defects in U 3+ :CaF 2 single crystals grown under different conditions by the temperature gradient technique
Author(s) -
Su Liangbi,
Xu Jun,
Yang Weiqiao,
Jiang Xiongwei,
Dong Yongjun,
Zhao Guangjun,
Zhou Guoqing
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200440035
Subject(s) - thermoluminescence , irradiation , impurity , raman spectroscopy , oxygen , analytical chemistry (journal) , materials science , electron beam processing , crystallographic defect , crystallography , chemistry , radiochemistry , luminescence , optics , physics , optoelectronics , organic chemistry , chromatography , nuclear physics
Defects in as‐grown U 3+ :CaF 2 crystals grown with or without PbF 2 as an oxygen scavenger were studied using Raman spectra, thermoluminescence glow curves, and additional absorption (AA) spectra induced by heating and γ‐irradiation. The effects of heating and irradiation on as‐grown U 3+ :CaF 2 crystals are similar, accompanied by the elimination of H‐type centers and production of F‐type centers. U 3+ is demonstrated to act as an electron donor in the CaF 2 lattice, which is oxidized to the tetravalent form by thermal activation or γ‐irradiation. In the absence of PbF 2 as an oxygen scavenger, the as‐grown U 3+ :CaF 2 crystals contain many more lattice defects in terms of both quantity and type, due to the presence of O 2– impurities. Some of these defects can recombine with each other in the process of heating and γ‐irradiation. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)