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Transport mechanism in mica and SiO 2 dielectrics
Author(s) -
Pipinys P.,
Lapeika V.,
Rimeika A.
Publication year - 2005
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200440020
Subject(s) - quantum tunnelling , mica , condensed matter physics , dielectric , phonon , impurity , charge (physics) , poole–frenkel effect , materials science , charge carrier , chemistry , physics , optoelectronics , quantum mechanics , composite material
The current–voltage ( I–V ) characteristics in mica have been measured at different temperatures. The I–V characteristics possessed a temperature dependence, which was more clearly evident at lower fields. A comparison of the experimental results with the Frenkel thermo‐emission theory and the theory of multiphonon‐assisted tunnelling of charge carriers from the impurity centers, has been performed. It is shown that the experimental data better agree with the phonon‐stimulated tunnelling theory than the Frenkel emission theory. Temperature‐dependent I–V characteristics of M–SiO 2 –Si structures measured by Waters and Van Zeghbroeck [Appl. Phys. Lett. 76 (8), 1039 (2000)] are also reinterpreted in terms of the phonon‐assisted tunnelling processes. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)