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On the non‐monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature
Author(s) -
Dubrovskii V. G.,
Soshnikov I. P.,
Cirlin G. E.,
Tonkikh A. A.,
Samsonenko Yu. B.,
Sibirev N. V.,
Ustinov V. M.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200409042
Subject(s) - whiskers , molecular beam epitaxy , materials science , condensed matter physics , drop (telecommunication) , nanotechnology , epitaxy , composite material , physics , layer (electronics) , telecommunications , computer science
GaAs nanowhiskers were grown by molecular beam epitaxy on the GaAs(111)B surface activated by Au at the surface temperature of 585 °C. The dependence of nanowhisker height on the size of Au–GaAs alloy drops was investigated. It has been found that the height of GaAs nanowhiskers is zero at a certain minimum diameter of drop, then increases with size, has a pronounced maximum at a certain size, decreases for thicker whiskers and finally goes to a certain asymptotic value. The theoretical model for the growth kinetics of nanowhiskers was developed in order to explain the observed size dependence. The results of comparison of theoretical and experimental data for the height of GaAs nanowhiskers are presented and analyzed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)