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Band structure effects in nitrogen K‐edge resonant inelastic X‐ray scattering from GaN
Author(s) -
Strocov V. N.,
Schmitt T.,
Rubensson J.E.,
Blaha P.,
Paskova T.,
Nilsson P. O.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200409040
Subject(s) - resonant inelastic x ray scattering , scattering , electronic band structure , inelastic scattering , excitation , nitrogen , momentum (technical analysis) , atomic physics , enhanced data rates for gsm evolution , physics , materials science , chemistry , condensed matter physics , inelastic neutron scattering , optics , telecommunications , quantum mechanics , computer science , finance , economics
Systematic experimental data on resonant inelastic X‐ray scattering (RIXS) in GaN near the N K‐edge are presented for the first time. Excitation energy dependence of the spectral structures manifests the band structure effects originating from momentum selectivity of the RIXS process. This finding allows obtaining k ‐resolved band structure information for GaN crystals and nanostructures. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)