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Intersubband absorption in n‐type GaAs/AlGaAs (001) quantum wells: A tight‐binding study
Author(s) -
Shtinkov N.,
Vlaev S. J.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200409029
Subject(s) - quantum well , absorption (acoustics) , conduction band , perpendicular , asymmetry , tight binding , condensed matter physics , chemistry , absorption spectroscopy , materials science , physics , optics , electronic structure , electron , quantum mechanics , mathematics , laser , geometry
We present theoretical calculations of the intersubband absorption in the conduction band of GaAs/AlGaAs (001) quantum wells (QWs), performed using the sp 3 d 5 s * empirical tight‐binding model and a Green’s functions approach. The absorption spectra for both in‐plane (TE) and perpendicular (TM) polarizations are calculated. The obtained TE/TM absorption ratio is in excellent agreement with recent experimental results. We find that the asymmetry of the QW potential has no significant effect on the TE/TM ratio. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)