Intersubband absorption in n‐type GaAs/AlGaAs (001) quantum wells: A tight‐binding study | Zendy

Shtinkov N. | Zendy; Vlaev S. J. | Zendy

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Intersubband absorption in n‐type GaAs/AlGaAs (001) quantum wells: A tight‐binding study

Author(s) -

Shtinkov N.,

Vlaev S. J.

Publication year - 2004

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200409029

Subject(s) - quantum well , absorption (acoustics) , conduction band , perpendicular , asymmetry , tight binding , condensed matter physics , chemistry , absorption spectroscopy , materials science , physics , optics , electronic structure , electron , quantum mechanics , mathematics , laser , geometry

We present theoretical calculations of the intersubband absorption in the conduction band of GaAs/AlGaAs (001) quantum wells (QWs), performed using the sp 3 d 5 s * empirical tight‐binding model and a Green’s functions approach. The absorption spectra for both in‐plane (TE) and perpendicular (TM) polarizations are calculated. The obtained TE/TM absorption ratio is in excellent agreement with recent experimental results. We find that the asymmetry of the QW potential has no significant effect on the TE/TM ratio. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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