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Ultrafast spectroscopy of localised vibrational modes in amorphous silicon using a free electron laser
Author(s) -
Wells J.P. R.,
van Hattum E. D.,
Schropp R. E. I.,
Phillips P. J.,
Carder D. A.,
Habraken F. H. P. M.,
Dijkhuis J. I.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405340
Subject(s) - phonon , amorphous silicon , relaxation (psychology) , silicon , ultrashort pulse , excitation , deuterium , molecular vibration , population , spectroscopy , materials science , atomic physics , amorphous solid , vibrational energy relaxation , hydrogen , laser , chemistry , molecular physics , raman spectroscopy , condensed matter physics , crystalline silicon , physics , optics , excited state , crystallography , optoelectronics , sociology , psychology , social psychology , quantum mechanics , demography , organic chemistry
Ultrafast vibrational relaxation of localised modes associated with hydrogen, deuterium and oxygen in amorphous silicon based alloys are discussed. The availability of internal defect vibrations to act as accepting modes is discovered to be a crucial factor in the population decay dynamics. Phase relaxation is shown to have both a temperature dependent component due to elastic phonon scattering as well as an excitation dependence contributed by non‐equilibrium phonons. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)