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Silicon‐based light emitting diode material studied under high pressure
Author(s) -
Prins A. D.,
Ishibashi Y.,
Sasahara S.,
Nakahara J.,
Lourenco M. A.,
Gwilliam R. M.,
Kobayashi T.,
Nagata A.,
Homewood K. P.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405251
Subject(s) - photoluminescence , silicon , diode , materials science , optoelectronics , light emitting diode , absorption (acoustics) , intensity (physics) , band gap , optics , physics , composite material
Abstract The influence of pressure up to around 30 kbar on the photoluminescence (PL) of material from a silicon light‐emitting diode (LED) that operates efficiently at room temperature is reported for the first time. The observed PL peak at 1140 nm shifts to lower energy at a rate of –1.4 ± 0.1 meV/kbar. The value of this shift agrees with earlier absorption measurements on the indirect band‐gap of silicon, confirming that the emission is closely related to this transition. This peak shows an increase in intensity from low to room temperature and peak position temperature results are compared to other sources. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)