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Carrier recombination processes in 1.3 μm and 1.5 μm InGaAs(P)‐based lasers at cryogenic temperatures and high pressures
Author(s) -
Sweeney S. J.,
Jin S. R.,
Ahmad C. N.,
Adams A. R.,
Murdin B. N.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405243
Subject(s) - auger effect , laser , auger , radiative transfer , atomic physics , chemistry , current (fluid) , materials science , thermodynamics , optics , physics
We describe measurements of the threshold current of 1.3 μm and 1.5 μm InGaAs(P)‐based quantum‐well lasers measured at cryogenic temperatures and at high pressures. At low temperatures (∼100 K), we find that the threshold current of the devices increases with increasing pressure consistent with the calculated pressure variation of the radiative current. This is in sharp contrast with their pressure dependence at room temperature (RT), where the threshold current decreases with increasing pressure due to the decrease in importance of Auger recombination. These low‐temperature, high‐pressure results agree well with previous temperature dependence measurements on the same devices, which show a transition from radiative to non‐radiative Auger recombination dominated behaviour as the laser temperature is increased from ∼100 K to room temperature. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)