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Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP‐based quantum well lasers
Author(s) -
Sweeney S. J.,
McConville D.,
Massé N. F.,
Bouyssou R.X.,
Adams A. R.,
Ahmad C. N.,
Hanke C.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405242
Subject(s) - laser , optoelectronics , quantum well , auger effect , conduction band , materials science , chemistry , auger , optics , atomic physics , physics , quantum mechanics , electron
The improved thermal stability of InGaAlAs‐based lasers compared with InGaAs‐based lasers for 1.5 μm operation is investigated using a combination of low temperature and high pressure techniques. The results indicate that the improved performance of InGaAlAs‐based devices is due to a reduction in the contribution of the non‐radiative Auger recombination current, I Aug , to the total threshold current, I th , in the InGaAlAs devices. This is due to the higher conduction band offset made possible with the InGaAlAs system which results in a lower hole density in the quantum wells at threshold. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)