Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP‐based quantum well lasers | Zendy

Sweeney S. J. | Zendy; McConville D. | Zendy; Massé N. F. | Zendy; Bouyssou R.X. | Zendy; Adams A. R. | Zendy; Ahmad C. N. | Zendy; Hanke C. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP‐based quantum well lasers

Author(s) -

Sweeney S. J.,

McConville D.,

Massé N. F.,

Bouyssou R.X.,

Adams A. R.,

Ahmad C. N.,

Hanke C.

Publication year - 2004

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200405242

Subject(s) - laser , optoelectronics , quantum well , auger effect , conduction band , materials science , chemistry , auger , optics , atomic physics , physics , quantum mechanics , electron

The improved thermal stability of InGaAlAs‐based lasers compared with InGaAs‐based lasers for 1.5 μm operation is investigated using a combination of low temperature and high pressure techniques. The results indicate that the improved performance of InGaAlAs‐based devices is due to a reduction in the contribution of the non‐radiative Auger recombination current, I Aug , to the total threshold current, I th , in the InGaAlAs devices. This is due to the higher conduction band offset made possible with the InGaAlAs system which results in a lower hole density in the quantum wells at threshold. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research