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Influence of P–T pre‐treatment on thermopower of Czochralski‐grown silicon at high pressure
Author(s) -
Shchennikov Vladimir V.,
Ovsyannikov Sergey V.,
Misiuk Andrzej,
Shchennikov Vsevolod V.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405240
Subject(s) - tetragonal crystal system , seebeck coefficient , orthorhombic crystal system , thermoelectric effect , materials science , silicon , high pressure , hexagonal crystal system , condensed matter physics , crystallography , chemistry , thermodynamics , optoelectronics , crystal structure , physics
For the first time the thermoelectric power of high‐pressure phases of Czochralski‐grown silicon (Cz‐Si) single crystals has been investigated. From the dependence on pressure of the thermopower the phase transitions in Si have been established. The influence of gas pressure (up to 1.5 GPa) and temperature (450–650 °C) pre‐treatment on thermoelectric properties of high‐pressure phases of Si with tetragonal, orthorhombic and simple hexagonal structures is discussed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)