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Symmetric and asymmetric GaAs/Al 0.3 Ga 0.7 As double quantum well subjected to hydrostatic pressure and applied electric field
Author(s) -
Morales A. L.,
Raigoza N.,
Montes A.,
PorrasMontenegro N.,
Duque C. A.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405224
Subject(s) - hydrostatic pressure , impurity , electric field , quantum well , condensed matter physics , effective mass (spring–mass system) , hydrostatic equilibrium , shallow donor , chemistry , physics , quantum mechanics , thermodynamics , laser
Abstract The combined electric field and hydrostatic pressure effects on the binding energy of a shallow‐donor impurity in symmetrical and asymmetrical GaAs/Al 0.3 Ga 0.7 As double quantum wells are calculated using a variational procedure within the effective‐mass approximation. Double quantum wells are examinated considering impurities situated at the well centers. Due to the applied electric field both structures become asymmetric from the impurity potential point of view. According to the dimensions the structures are symmetric (equal well lengths) and asymmetrical (different well lengths). (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)