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Recombination mechanisms in InAs/InP quantum dash lasers studied using high hydrostatic pressure
Author(s) -
Marko I. P.,
Sweeney S. J.,
Adams A. R.,
Jin S. R.,
Murdin B. N.,
Schwertberger R.,
Somers A.,
Reithmaier J. P.,
Forchel A.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405219
Subject(s) - laser , hydrostatic pressure , lasing threshold , auger effect , quantum well , atomic physics , wavelength , materials science , chemistry , thermal , atmospheric temperature range , optoelectronics , optics , auger , thermodynamics , physics
Two types of InAs quantum dash lasers grown on InP substrates with lasing wavelengths of 1.52 μm and 1.76 μm were studied. In both laser types the threshold current density, J th , was about 2 kA/cm 2 at room temperature and had a similar temperature sensitivity ( T 0 was about 80 K in the range T = 120–250 K, and T 0 = 60–70 K from 250 to 300 K). Measurements of the spontaneous emission from a window milled in a substrate contact showed that J rad , the radiative part of J th , is almost temperature independent and less than 5% of J th at T = 295 K, demonstrating that the relatively large value of J th and its temperature sensitivity must be due to non‐radiative recombination processes. However, despite the similar temperature behaviour of the lasers, their pressure dependences were very different showing that in the 1.52 μm lasers, pressure independent defect related recombination outside the dashes due to thermal carrier spill‐over or thermal leakage dominates, while in the 1.76 μm quantum dash laser 60% of J th is due to Auger recombination. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)