Recombination dynamics in self‐assembled InP/GaP quantum dots under high pressure | Zendy

Kristukat C. | Zendy; Dworzak M. | Zendy; Gonñi A. R. | Zendy; Zimmer P. | Zendy; Hatami F. | Zendy; Dreßler S. | Zendy; Hoffmann A. | Zendy; Masselink W. T. | Zendy; Thomsen C. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Recombination dynamics in self‐assembled InP/GaP quantum dots under high pressure

Author(s) -

Kristukat C.,

Dworzak M.,

Gonñi A. R.,

Zimmer P.,

Hatami F.,

Dreßler S.,

Hoffmann A.,

Masselink W. T.,

Thomsen C.

Publication year - 2004

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200405216

Subject(s) - wetting layer , quantum dot , hydrostatic pressure , photoluminescence , recombination , relaxation (psychology) , excitation , chemistry , materials science , molecular physics , atomic physics , condensed matter physics , optoelectronics , physics , psychology , social psychology , biochemistry , quantum mechanics , gene , thermodynamics

We have investigated the recombination dynamics in self‐assembled InP/GaP quantum dots by means of time‐resolved photoluminescence measured at low temperatures between 2 and 100 K and high hydrostatic pressure up to 2 GPa. Due to the high‐power levels for pulsed excitation, the quantum dot emission exhibits two components with typical decay times of 5 and 30 ns, corresponding to direct Γ – Γ and X – Γ interband recombination processes, respectively. These decay times appear to be independent of pressure. At a very low pressure of about 0.1 GPa the intensity of the dot emission drops abruptly relative to that of the wetting layer indicating a switching off of a carrier relaxation channel. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research