Premium
Recombination dynamics in self‐assembled InP/GaP quantum dots under high pressure
Author(s) -
Kristukat C.,
Dworzak M.,
Gonñi A. R.,
Zimmer P.,
Hatami F.,
Dreßler S.,
Hoffmann A.,
Masselink W. T.,
Thomsen C.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405216
Subject(s) - wetting layer , quantum dot , hydrostatic pressure , photoluminescence , recombination , relaxation (psychology) , excitation , chemistry , materials science , molecular physics , atomic physics , condensed matter physics , optoelectronics , physics , psychology , social psychology , biochemistry , quantum mechanics , gene , thermodynamics
We have investigated the recombination dynamics in self‐assembled InP/GaP quantum dots by means of time‐resolved photoluminescence measured at low temperatures between 2 and 100 K and high hydrostatic pressure up to 2 GPa. Due to the high‐power levels for pulsed excitation, the quantum dot emission exhibits two components with typical decay times of 5 and 30 ns, corresponding to direct Γ – Γ and X – Γ interband recombination processes, respectively. These decay times appear to be independent of pressure. At a very low pressure of about 0.1 GPa the intensity of the dot emission drops abruptly relative to that of the wetting layer indicating a switching off of a carrier relaxation channel. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)