Raman scattering studies in two kinds of Ge nanosystems under hydrostatic pressure | Zendy

Teo K. L. | Zendy; Shen Z. X. | Zendy; Liu L. | Zendy; Kolobov A. V. | Zendy; Maeda Y. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Raman scattering studies in two kinds of Ge nanosystems under hydrostatic pressure

Author(s) -

Teo K. L.,

Shen Z. X.,

Liu L.,

Kolobov A. V.,

Maeda Y.

Publication year - 2004

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200405210

Subject(s) - raman scattering , substrate (aquarium) , raman spectroscopy , hydrostatic pressure , quartz , materials science , matrix (chemical analysis) , compressibility , delamination (geology) , scattering , hydrostatic equilibrium , composite material , optics , thermodynamics , geology , paleontology , oceanography , physics , subduction , tectonics , quantum mechanics

We report Raman scattering of Ge nanocrystals (NCs) embedded in SiO 2 matrix on Si substrate (Ge/SiO 2 /Si) and on quartz substrate (Ge/SiO 2 /quartz) under hydrostatic pressure. The pressure coefficient obtained for the Ge mode in the Ge/SiO 2 /quartz nanosystem is found to be almost twice as large com‐ pared with its corresponding bulk value. We explained our results using a simple elastic model, which describes the effective pressure transmitted from the matrix to the NCs. In Ge/SiO 2 /Si nanosystem, delamination of the SiO 2 film from the Si substrate occurs at ∼23 kbar due to the large difference between the compressibility of the SiO 2 matrix and Si substrate. The observed effect can be understood by the nonhomogeneous distribution of the elastic field in the Ge/SiO 2 /Si nanosystem using a finite element analysis. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research