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Nernst–Ettingshausen and magnetoresistance effects in Hg 1– x Cd x Se single crystals in vicinity of phase transitions under hydrostatic pressure
Author(s) -
Shchennikov Vladimir V.,
Ovsyannikov Sergey V.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405206
Subject(s) - condensed matter physics , hydrostatic pressure , magnetoresistance , chemistry , phase diagram , phase transition , electronic band structure , phase (matter) , crystallography , thermodynamics , magnetic field , physics , organic chemistry , quantum mechanics
In the present paper the thermomagnetic longitudinal and transverse Nernst–Ettingshausen (N–E) effects were investigated in Hg 1– x Cd x Se ( x = 0.03, 0.07) single crystals at hydrostatic pressure up to ∼2 GPa. Substitution of Cd atoms into cation sublattice increases strongly the stability of initial zinc blende lattice and shifts the phase transformation into cinnabar structure to higher pressures P ≥ 1.4 GPa. For ternary Hg 1– x Cd x Se compounds the values of mobility and scattering parameters of charge carriers have been obtained from the N–E and magnetoresistance (MR) effects up to phase transition points 1.4–1.7 GPa. The decreasing of mobility under pressure is consistent with opening of direct semiconductor gap. In vicinity of the structural phase transformations into cinnabar structure an anomaly of transverse N–E effect was observed connected probably with peculiarity of electronic band structure. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)