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Pressure tuning of localized and extended vibrational modes in Si:O
Author(s) -
McCluskey M. D.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405203
Subject(s) - laser linewidth , phonon , molecular vibration , harmonic oscillator , infrared , hydrostatic pressure , silicon , atom (system on chip) , two dimensional infrared spectroscopy , infrared spectroscopy , chemistry , semiconductor , vibrational energy relaxation , atomic physics , molecular physics , materials science , condensed matter physics , raman spectroscopy , physics , optics , optoelectronics , excited state , thermodynamics , quantum mechanics , laser , organic chemistry , computer science , embedded system
Interstitial oxygen in silicon (Si:O) is a model system for the study of vibrational modes in semiconductors. Hydrostatic pressure has been used to probe the vibrational properties of this defect. In this paper, the results of infrared (IR) spectroscopy experiments on Si: 16 O and Si: 18 O are reviewed. As pressure is applied, the oxygen atom buckles outward. This structural change results in a qualitative change in low‐frequency vibrational motion in the [111] plane, as the system transforms from a harmonic oscillator to a rotor. A particularly interesting phenomenon occurs when the Si: 18 O local vibrational mode (LVM) approaches the two‐phonon continuum. First, the LVM exhibits an avoided crossing with certain combination modes of the defect. Second, when the LVM enters the two‐phonon continuum, the linewidth abruptly broadens, due to a decrease in the lifetime. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)