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Properties of the fundamental absorption edge of InN crystals investigated by optical reflection and transmission spectra
Author(s) -
Ishitani Y.,
Xu K.,
Che S. B.,
Masuyama H.,
Terashima W.,
Yoshitani M.,
Hashimoto N.,
Akasaka K.,
Ohkubo T.,
Yoshikawa A.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405097
Subject(s) - absorption edge , band gap , sapphire , materials science , spectral line , impurity , absorption spectroscopy , phonon , absorption (acoustics) , valence (chemistry) , condensed matter physics , reflection (computer programming) , optics , molecular physics , chemistry , optoelectronics , laser , physics , organic chemistry , astronomy , composite material , computer science , programming language
InN crystals are grown on sapphire substrates using a plasma‐assisted MBE system. The carrier concentrations of the samples are 2 × 10 18–1 × 10 19 cm –3 . Optical transmission and reflectance measurements are performed on these samples in the temperature range 5–300 K. The resultant spectra are analysed by theoretical spectra based on the LO‐phonon–plasmon coupling scheme for the phonon‐related factor and non‐parabolic conduction band structure for the electronic transition factor. The observed absorption edge is estimated to originate from a valence band to conduction band transition rather than a defect‐ or impurity‐related transition. It is estimated that InN has a bandgap energy in the range 0.59–0.65 eV. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)