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Spatially resolved cathodoluminescence study on AlGaN layer fabricated by air‐bridged lateral epitaxial growth
Author(s) -
Ishibashi Akihiko,
Kawaguchi Yasutoshi,
Sugahara Gaku,
Shimamoto Toshitaka,
Yokogawa Toshiya,
Yamada Yoichi,
Ueki Yusuke,
Nakamura Kohzo,
Taguchi Tsunemasa
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405073
Subject(s) - cathodoluminescence , coalescence (physics) , materials science , epitaxy , layer (electronics) , optoelectronics , crystallography , composite material , chemistry , luminescence , physics , astrobiology
Structural properties of AlGaN layer on the GaN seed layer fabricated by air‐bridged lateral epitaxial growth (ABLEG) have been studied by spatially resolved cathodoluminescence (CL) microscopy. The cross‐sectional spatially resolved CL images of the ABLEG‐AlGaN layer reveal that there are roughly three regions which have different main CL peaks. This result suggests that there are roughly three regions with the different Al contents. Before coalescence of the overgrown AlGaN wings, there are two regions of Al content, such as about 6.5, 10.6%. On the other hand, after coalescence of the wings, the Al content of the AlGaN layer becomes uniform (Al content = 8.9%). These results suggest that the facet growth of the overgrown AlGaN wings causes the modulation of Al content in the ABLEG‐AlGaN layer. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)