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The influence of aluminum composition of Al x Ga 1– x As in distributed Bragg reflector on surface morphology
Author(s) -
Kim B.,
Yoon M.,
Kim S.,
Son J.,
Kim B.,
Jhin J.,
Byun D.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405069
Subject(s) - morphology (biology) , metalorganic vapour phase epitaxy , distributed bragg reflector , epitaxy , materials science , aluminium , distributed bragg reflector laser , layer (electronics) , crystallography , analytical chemistry (journal) , chemistry , optoelectronics , nanotechnology , metallurgy , geology , wavelength , paleontology , chromatography
Surface morphology of the AlGaAs/GaAs Vertical Cavity Surface Emitting Laser (VCSEL) grown by metalorganic vapor phase epitaxy (MOVPE) was investigated using atomic force microscopy. It is shown that the morphology of the structure strongly depends on the aluminum composition of the low Al content layer of distributed Bragg reflector (DBR) pairs and epi thickness. Whereas a high Al content layer in DBRs had little effect on the surface morphology, it was attributed that the influence of Al composition on the morphology of Al x Ga 1– x As on GaAs was stronger in the range of 0 < x < 0.5 than 0.5 < x < 1. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)