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Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy
Author(s) -
Kim J. S.,
Kim E. K.,
Kim H. J.,
Yoon E.,
Park I.W.,
Park Y. J.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405068
Subject(s) - quantum dot , deep level transient spectroscopy , materials science , optoelectronics , conduction band , spectroscopy , barrier layer , capacitance , band gap , transient (computer programming) , enhanced data rates for gsm evolution , wide bandgap semiconductor , layer (electronics) , chemistry , nanotechnology , physics , electron , electrode , telecommunications , silicon , computer science , operating system , quantum mechanics
We have investigated the electrical property of InGaN quantum dots (QDs) embedded in GaN layer using capacitance–voltage and deep‐level transient spectroscopy (DLTS) measurements. The apparent activation energy was observed 0.43 eV below the conduction band edge of barrier layers in InGaN/GaN QDs system. The capture barrier height of InGaN QDs was measured more than about 0.17 eV, showing the existence of strain between QDs and barrier layers. Thus, the bound state of QDs was estimated as 0.26 eV apart from the conduction band edge of the GaN. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)