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Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy
Author(s) -
Kim HwaMok,
Lee Hosang,
Kim Suk Il,
Ryu Sung Ryong,
Kang Tae Won,
Chung Kwan Soo
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405043
Subject(s) - nanorod , mole fraction , indium , hydride , epitaxy , vapor phase , materials science , sapphire , mole , analytical chemistry (journal) , phase (matter) , crystallography , chemistry , nanotechnology , optoelectronics , metal , metallurgy , optics , organic chemistry , laser , physics , layer (electronics) , thermodynamics
This work demonstrates the formation of InGaN nanorod arrays with indium mole fractions by hydride vapor phase epitaxy. The nanorods grown on (0001) sapphire substrates are preferentially oriented in the c ‐axis direction. We found that the In mole fractions in the nanorods were linearly increased at x < 0.1. However, In mole fractions were slightly increased at x ≥ 0.1 and then were gradually saturated at x = 0.2. CL spectra show strong emissions from 380 nm ( x = 0.04, 3.26 eV) to 470 nm ( x = 0.2, 2.64 eV) at room temperature. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)