Premium
Efficiency enhancement of InGaN/GaN light‐emitting diodes utilizing island‐like GaN substrate
Author(s) -
Hsu J. T.,
Tsay J. D.,
Guo Y. D.,
Chuo C. C.,
Pan S. M.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405033
Subject(s) - light emitting diode , materials science , optoelectronics , sapphire , epitaxy , substrate (aquarium) , diode , chip , gallium nitride , lithography , optics , nanotechnology , laser , layer (electronics) , telecommunications , computer science , physics , oceanography , geology
This study develops a novel way to fabricate GaN LED (light emitting diode) chips with special shape to improve the optical output power. The thick and shaped GaN islands were first prepared on c ‐axis sapphire substrate by lithography and selective growth of Hydride Vapor Phase Epitaxy (HVPE). The shaped GaN LED chips were then fabricated from each GaN island. The output power from shaped LED chip is measured about 2 times of that from normal cubic chip. It indicates that the island‐like GaN substarte will be useful in the manufacture of high efficient GaN‐based LEDs. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)