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Optical characterization of InAsN single quantum wells grown by RF‐MBE
Author(s) -
Kuroda M.,
Katayama R.,
Onabe K.,
Shiraki Y.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405032
Subject(s) - blueshift , photoluminescence , quantum well , redshift , alloy , absorption edge , materials science , band gap , bowing , molecular beam epitaxy , condensed matter physics , moss , monolayer , absorption (acoustics) , optoelectronics , chemistry , optics , physics , layer (electronics) , astrophysics , composite material , nanotechnology , epitaxy , biology , laser , philosophy , theology , galaxy , botany
InAsN/GaAs single quantum wells (SQWs) were fabricated on semi insulating GaAs(001) substrates by RF‐MBE. The redshift of photoluminescence peak with increasing nitrogen content was observed. It is contrary to the recent report for the bulk dilute InAsN alloy where the blueshift of absorption edge has occurred predominantly due to the Burstein–Moss effect. Considering that the Burstein–Moss shift energy of the one‐dimensional quantum well is significantly lower than that of the bulk, this redshift of photoluminescence peak suggests the huge bandgap bowing of InAsN alloy as commonly found in III–V–N type alloys. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)