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Structural and optical properties of rare‐earth doped quantum dots grown by plasma‐assisted MBE
Author(s) -
Hori Y.,
Andreev T.,
Jalabert D.,
Biquard X.,
Monroy E.,
Tanaka M.,
Oda O.,
Dang Le Si,
Daudin B.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405029
Subject(s) - doping , photoluminescence , quantum dot , rare earth , materials science , optoelectronics , kinetic energy , plasma , analytical chemistry (journal) , chemistry , physics , metallurgy , chromatography , quantum mechanics
We demonstrate Eu, Tm and Er doping of GaN quantum dots. In Er‐doped samples, two very sharp blue lines were observed. These lines were dominant over the green lines reported in the case of Er‐doped GaN thick layers. However, intensities were very low in comparison with Eu‐doped and Tm‐doped GaN QDs. Intense blue emission from Tm‐doped GaN QDs was observed. Temperature‐dependent photoluminescence was studied, and the intensity only decreased to 27% between room temperature and 10 K. Structural studies on Tm‐doped samples showed that the kinetic role of Tm atoms was different from that of Eu atoms. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)