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Carrier injection and light emission in visible and UV nitride LEDs by modeling
Author(s) -
Karpov S. Yu.,
Bulashevich K. A.,
Zhmakin I. A.,
Nestoklon V. O.,
Mymrin V. F.,
Makarov Yu. N.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200405023
Subject(s) - light emitting diode , optoelectronics , heterojunction , materials science , nitride , spontaneous emission , diode , indium gallium nitride , wide bandgap semiconductor , gallium nitride , polarization (electrochemistry) , semiconductor , optics , physics , chemistry , nanotechnology , laser , layer (electronics)
Polarization effects on carrier injection and light emission are considered by modeling with reference to single‐quantum‐well blue light emitting diode heterostructures of either Ga‐ or N‐polarity. The model accounts for specific features of nitride semiconductors, spontaneous and piezo‐polarization, strong non‐radiative recombination on threading dislocation cores, complex valence band structure, etc., and allows detailed analysis of the device operation. The modeling results are compared with available observations. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)