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Bonding and structure of some high‐ k oxide:Si interfaces
Author(s) -
Robertson J.,
Peacock P. W.
Publication year - 2004
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200404939
Subject(s) - ionic bonding , oxide , high κ dielectric , covalent bond , dielectric , materials science , nanotechnology , crystallography , chemistry , ion , optoelectronics , metallurgy , organic chemistry
Electron counting rules are developed to describe the bonding at interfaces between covalent networks and ionic oxides. These rules are used to describe the bonding at various idealised interfaces of Si(100) with various high dielectric constant ( k ) gate oxides such as HfO 2 , ZrO 2 , SrTiO 3 and LaAlO 3 . (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)